Ignition Performance of SCB/Pb•BaTNR

Polysilicon thin-film semiconductor bridges (SCB) and Pb•BaTNR primary explosives are selected to prepare SCB/Pb•BaTNR samples, and their ignition performance is tested. The test results show that the SCB/Pb•BaTNR samples were ignited random when the ignition energy provided for SCB is insufficient but aroud critical value. Under different energy-storage capacitance, the voltages that lead to SCB completely gasifying into high-energy plasma are around 21V, indicating that charging voltage is the main factor affecting SCB elements to produce high-energy plasma. Ignition tests are performed on the SCB/Pb•BaTNR samples under the conditions of 47μF/21V, 64μF/21V, and 100μF/21V. The samples are found to ignite reliably, and the action time ranges from 0.17 ms to 0.4 ms, meeting the requirements for high instantaneity.