Unusual dual optimum temperatures for ionizing radiation-induced defect generation in GLPNP bipolar transistors

Elevated temperature irradiation (ETI) is performed on the specially designed GLPNP transistors. Two temperatures rather than one are found to most efficiently promote the growth of traps on SiO 2 /Si interface. The activation energies of the generation process near either optimum temperature ( T C...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2023-05, Vol.34 (13), p.1119, Article 1119
Hauptverfasser:	Zhou, Hang, Zhang, Guanghui, Duan, Binghuang, Liu, Yang
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Bipolar transistors Characterization and Evaluation of Materials Chemistry and Materials Science Defects Dependence Experiments High temperature Hole traps Ionizing radiation Materials Science Optical and Electronic Materials Physics Radiation Radiation effects Semiconductor devices Silicon dioxide Storms Temperature Transistors
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