Unusual dual optimum temperatures for ionizing radiation-induced defect generation in GLPNP bipolar transistors

Elevated temperature irradiation (ETI) is performed on the specially designed GLPNP transistors. Two temperatures rather than one are found to most efficiently promote the growth of traps on SiO 2 /Si interface. The activation energies of the generation process near either optimum temperature ( T C ) are approximately 0.88eV and 0.56eV, which imply at least two defect precursors are involved. Analysis suggest that the unusual two T C should result from different mechanisms, which involved the competition between the conversion of charged traps to interface traps and the annealing of either hole traps or interface traps.