The investigation of frequency dependent dielectric properties and ac conductivity by impedance spectroscopy in the Al/(Cu-doped Diamond Like Carbon)/Au structures
In order to perform metal-interlayer-semiconductor (MIS) Schottky diodes (SDs) with a greater barrier height (BH), various materials are used at M/S interface as interlayer. Here, the interlayer material's characteristics are crucial, notably the need for characteristics like substrate adhesion...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2023-05, Vol.34 (13), p.1118, Article 1118 |
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| creator | Feizollahi Vahid, A. Alptekin, S. Basman, N. Ulusoy, M. Şafak Asar, Y. Altındal, Ş. |
| description | In order to perform metal-interlayer-semiconductor (MIS) Schottky diodes (SDs) with a greater barrier height (BH), various materials are used at M/S interface as interlayer. Here, the interlayer material's characteristics are crucial, notably the need for characteristics like substrate adhesion, thermal-stability, and low-resistance. Due to its exceptional qualities, diamond-like carbon (DLC), one of the favored materials, was chosen in this investigation. To create the Al/(Cu-DLC)/p-Si/Au MIS type SD in this case, a copper-doped diamond-like carbon (Cu-DLC) nanocomposite film was electrochemically formed as an interlayer. Scanning electron microscopy (SEM) was also used to evaluate the electrodeposited (Cu-DLC) film. The impedance spectroscopy (IS) technique was used to analyze the real-imaginary components of complex dielectric (
ε
′,
ε
″) and electric modulus (
M′
,
M″
), tangent-loss
(
tan
δ
)
and ac electrical conductivity
(
σ
ac
)
in wide range of frequency (3 kHz–3 MHz) and voltage (± 4.0 V). All these parameters derived from the impedance-measurements were found strong function of frequency and voltage at low-moderate frequencies due to a unique distribution of surface states
(
N
ss
)
at (Cu-DLC)/p-Si interface and interfacial/dipole polarizations. As frequency rises,
M′
and
M″
, values rise while
ε
′ and
ε
″ values decrease. |
| doi_str_mv | 10.1007/s10854-023-10546-z |
| format | Article |
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ε
′,
ε
″) and electric modulus (
M′
,
M″
), tangent-loss
(
tan
δ
)
and ac electrical conductivity
(
σ
ac
)
in wide range of frequency (3 kHz–3 MHz) and voltage (± 4.0 V). All these parameters derived from the impedance-measurements were found strong function of frequency and voltage at low-moderate frequencies due to a unique distribution of surface states
(
N
ss
)
at (Cu-DLC)/p-Si interface and interfacial/dipole polarizations. As frequency rises,
M′
and
M″
, values rise while
ε
′ and
ε
″ values decrease.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-023-10546-z</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Aluminum ; Carbon ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Copper ; Diamond-like carbon films ; Dielectric properties ; Dipoles ; Electric potential ; Electrical resistivity ; Gold ; Impedance spectroscopy ; Interlayers ; Materials Science ; MIS (semiconductors) ; Nanocomposites ; Optical and Electronic Materials ; Schottky diodes ; Silicon ; Spectrum analysis ; Substrates ; Thermal resistance ; Voltage</subject><ispartof>Journal of materials science. Materials in electronics, 2023-05, Vol.34 (13), p.1118, Article 1118</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-8994c2f0b26736fbf41522d93c22541118932c3dca2033067aa1cbc59d01d4ee3</citedby><cites>FETCH-LOGICAL-c319t-8994c2f0b26736fbf41522d93c22541118932c3dca2033067aa1cbc59d01d4ee3</cites><orcidid>0000-0002-7718-2856</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-023-10546-z$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-023-10546-z$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27922,27923,41486,42555,51317</link.rule.ids></links><search><creatorcontrib>Feizollahi Vahid, A.</creatorcontrib><creatorcontrib>Alptekin, S.</creatorcontrib><creatorcontrib>Basman, N.</creatorcontrib><creatorcontrib>Ulusoy, M.</creatorcontrib><creatorcontrib>Şafak Asar, Y.</creatorcontrib><creatorcontrib>Altındal, Ş.</creatorcontrib><title>The investigation of frequency dependent dielectric properties and ac conductivity by impedance spectroscopy in the Al/(Cu-doped Diamond Like Carbon)/Au structures</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>In order to perform metal-interlayer-semiconductor (MIS) Schottky diodes (SDs) with a greater barrier height (BH), various materials are used at M/S interface as interlayer. Here, the interlayer material's characteristics are crucial, notably the need for characteristics like substrate adhesion, thermal-stability, and low-resistance. Due to its exceptional qualities, diamond-like carbon (DLC), one of the favored materials, was chosen in this investigation. To create the Al/(Cu-DLC)/p-Si/Au MIS type SD in this case, a copper-doped diamond-like carbon (Cu-DLC) nanocomposite film was electrochemically formed as an interlayer. Scanning electron microscopy (SEM) was also used to evaluate the electrodeposited (Cu-DLC) film. The impedance spectroscopy (IS) technique was used to analyze the real-imaginary components of complex dielectric (
ε
′,
ε
″) and electric modulus (
M′
,
M″
), tangent-loss
(
tan
δ
)
and ac electrical conductivity
(
σ
ac
)
in wide range of frequency (3 kHz–3 MHz) and voltage (± 4.0 V). All these parameters derived from the impedance-measurements were found strong function of frequency and voltage at low-moderate frequencies due to a unique distribution of surface states
(
N
ss
)
at (Cu-DLC)/p-Si interface and interfacial/dipole polarizations. As frequency rises,
M′
and
M″
, values rise while
ε
′ and
ε
″ values decrease.</description><subject>Aluminum</subject><subject>Carbon</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Copper</subject><subject>Diamond-like carbon films</subject><subject>Dielectric properties</subject><subject>Dipoles</subject><subject>Electric potential</subject><subject>Electrical resistivity</subject><subject>Gold</subject><subject>Impedance spectroscopy</subject><subject>Interlayers</subject><subject>Materials Science</subject><subject>MIS (semiconductors)</subject><subject>Nanocomposites</subject><subject>Optical and Electronic Materials</subject><subject>Schottky diodes</subject><subject>Silicon</subject><subject>Spectrum analysis</subject><subject>Substrates</subject><subject>Thermal resistance</subject><subject>Voltage</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9kctqHDEQRUWwIWMnP5BVgTfJQh69-rUcJvEDBrKxwTuhlqodOTPqtqQ2jH8nP2rZE_DOi6KguOcWl0vIN87OOWPNMnHWVooyISlnlarp8yey4FUjqWrF3RFZsK5qqKqE-ExOUnpgjNVKtgvy7-YPgg9PmLK_N9mPAcYBhoiPMwa7B4cTBochg_O4RZujtzDFccKYPSYwwYGxYMfgZpv9k8976PfgdxM6EyxCml6hMdlxKucAufxbbZff1zN1xcXBT292hYaN_4uwNrEfw4_laoaUY3GcI6Yv5Hgw24Rf_-9Tcnvx62Z9RTe_L6_Xqw21kneZtl2nrBhYL-pG1kM_KF7yuk5aISrFOW87Kax01ggmJasbY7jtbdU5xp1ClKfk7OBb8pX4KeuHcY6hvNSi5VyWYbyoxEFlS6oUcdBT9DsT95oz_VqGPpShSxn6rQz9XCB5gFIRh3uM79YfUC-ltpAn</recordid><startdate>20230501</startdate><enddate>20230501</enddate><creator>Feizollahi Vahid, A.</creator><creator>Alptekin, S.</creator><creator>Basman, N.</creator><creator>Ulusoy, M.</creator><creator>Şafak Asar, Y.</creator><creator>Altındal, Ş.</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><orcidid>https://orcid.org/0000-0002-7718-2856</orcidid></search><sort><creationdate>20230501</creationdate><title>The investigation of frequency dependent dielectric properties and ac conductivity by impedance spectroscopy in the Al/(Cu-doped Diamond Like Carbon)/Au structures</title><author>Feizollahi Vahid, A. ; Alptekin, S. ; Basman, N. ; Ulusoy, M. ; Şafak Asar, Y. ; Altındal, Ş.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-8994c2f0b26736fbf41522d93c22541118932c3dca2033067aa1cbc59d01d4ee3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Aluminum</topic><topic>Carbon</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Copper</topic><topic>Diamond-like carbon films</topic><topic>Dielectric properties</topic><topic>Dipoles</topic><topic>Electric potential</topic><topic>Electrical resistivity</topic><topic>Gold</topic><topic>Impedance spectroscopy</topic><topic>Interlayers</topic><topic>Materials Science</topic><topic>MIS (semiconductors)</topic><topic>Nanocomposites</topic><topic>Optical and Electronic Materials</topic><topic>Schottky diodes</topic><topic>Silicon</topic><topic>Spectrum analysis</topic><topic>Substrates</topic><topic>Thermal resistance</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Feizollahi Vahid, A.</creatorcontrib><creatorcontrib>Alptekin, S.</creatorcontrib><creatorcontrib>Basman, N.</creatorcontrib><creatorcontrib>Ulusoy, M.</creatorcontrib><creatorcontrib>Şafak Asar, Y.</creatorcontrib><creatorcontrib>Altındal, Ş.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Feizollahi Vahid, A.</au><au>Alptekin, S.</au><au>Basman, N.</au><au>Ulusoy, M.</au><au>Şafak Asar, Y.</au><au>Altındal, Ş.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The investigation of frequency dependent dielectric properties and ac conductivity by impedance spectroscopy in the Al/(Cu-doped Diamond Like Carbon)/Au structures</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2023-05-01</date><risdate>2023</risdate><volume>34</volume><issue>13</issue><spage>1118</spage><pages>1118-</pages><artnum>1118</artnum><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>In order to perform metal-interlayer-semiconductor (MIS) Schottky diodes (SDs) with a greater barrier height (BH), various materials are used at M/S interface as interlayer. Here, the interlayer material's characteristics are crucial, notably the need for characteristics like substrate adhesion, thermal-stability, and low-resistance. Due to its exceptional qualities, diamond-like carbon (DLC), one of the favored materials, was chosen in this investigation. To create the Al/(Cu-DLC)/p-Si/Au MIS type SD in this case, a copper-doped diamond-like carbon (Cu-DLC) nanocomposite film was electrochemically formed as an interlayer. Scanning electron microscopy (SEM) was also used to evaluate the electrodeposited (Cu-DLC) film. The impedance spectroscopy (IS) technique was used to analyze the real-imaginary components of complex dielectric (
ε
′,
ε
″) and electric modulus (
M′
,
M″
), tangent-loss
(
tan
δ
)
and ac electrical conductivity
(
σ
ac
)
in wide range of frequency (3 kHz–3 MHz) and voltage (± 4.0 V). All these parameters derived from the impedance-measurements were found strong function of frequency and voltage at low-moderate frequencies due to a unique distribution of surface states
(
N
ss
)
at (Cu-DLC)/p-Si interface and interfacial/dipole polarizations. As frequency rises,
M′
and
M″
, values rise while
ε
′ and
ε
″ values decrease.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-023-10546-z</doi><orcidid>https://orcid.org/0000-0002-7718-2856</orcidid></addata></record> |
| fulltext | fulltext |
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| ispartof | Journal of materials science. Materials in electronics, 2023-05, Vol.34 (13), p.1118, Article 1118 |
| issn | 0957-4522 1573-482X |
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| source | SpringerLink Journals - AutoHoldings |
| subjects | Aluminum Carbon Characterization and Evaluation of Materials Chemistry and Materials Science Copper Diamond-like carbon films Dielectric properties Dipoles Electric potential Electrical resistivity Gold Impedance spectroscopy Interlayers Materials Science MIS (semiconductors) Nanocomposites Optical and Electronic Materials Schottky diodes Silicon Spectrum analysis Substrates Thermal resistance Voltage |
| title | The investigation of frequency dependent dielectric properties and ac conductivity by impedance spectroscopy in the Al/(Cu-doped Diamond Like Carbon)/Au structures |
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