Vertical Nonvolatile Schottky‐Barrier‐Field‐Effect Transistor with Self‐Gating Semimetal Contact

Emerging 2D nonvolatile Schottky‐barrier‐field‐effect transistors (NSBFETs) are envisaged to build a promising reconfigurable in‐memory architecture to mimic the brain. Herein, a vertically stacked multilayered graphene (MGr)‐molybdenum disufide (MoS2)‐tungsten ditelluride (WTe2) NSBFET is reported. The semimetal WTe2 with the charge‐trapping effect enables the simultaneous integration of the electrode and the self‐gating function. The effective Schottky barrier height offset ΔΦB is programed from ΔΦB‐p = 132.6 meV to ΔΦB‐n = 109.4 meV, inducing the reversed built‐in electric field to make the NSBFET, so as to provide one with a multifunctional platform to integrate the nonvolatility and the reconfigurable self‐powered photo response. The reversible open‐circuit voltages of NSBFET synapse are programmed from −0.1 to 0.25 V and the self‐powered responsivity with reversed signs is tuned from 290 to −50 mA W−1, which enables the representation of a signed weight in a single device to enrich multiple optical sensing and computing capabilities. A vertically stacked multilayered graphene‐MoS2‐WTe2 nonvolatile Schottky‐barrier‐field‐effect transistor is reported. The semimetal WTe2 simultaneously integrates the electrode and the self‐gating function and enables the device to show the reconfigurable memory function through modulating barrier height at contact interfaces. The device also provides a multifunctional platform to integrate the nonvolatility and the programmable self‐powered photo response.