Study the effect of tin on the energy density of states of Se60Te40-XSnx chalcogenide glass

In this paper, Se60Te40-xSnx chalcogenide glasses with different concentrations of Tin (x=0, 5, 10, 15 and 20) were prepared) by melting point method. The electrical properties, i.e. electrical conductivity as a function of temperature, were studied. The activation energy was calculated and was found that at the extended state it changes from 0.223 to 0.281, local state, the activation energy changes from 0.159 to 0.306 and at the Fermi level; it is found that it changes from 0.151 to 0.231. As for the width of energy tails, they are decreasing, and this indicates that the randomness of the compound is decreased, meaning that it has become more crystalline. The Energy density of state the extended, localized, at Fermi energy and the effect of adding Sn on it also was calculated. The increase in Tin (Sn) concentration led to a change in the density of extended, localized, and at Fermi level. it was found that the extended levels changed from 1.650x1024 to 6.226x1025, localize state, they change from 2.881x1020 to 2.113x1024, as for Fermi level, the density of states changed from 5.033x1021 to 1.942x1023 when the Tin concentration increased from 0 to 20.