Preparation and study the effective of Sb on the energy density of states of Se60 Te40

In this paper, the Se60Te40-xsbx compound was prepared with different concentrations of antimony (Sb) (where x = 0, 5, 10, 15, 20) by melting point method. The electrical measurements of semiconductors were studied by analyzing the results of electrical conductivity as a function of temperature. The Moot-Davis model has been adopted as the emblem of three mechanisms that can control the conduction of electrons through amorphous semiconductors. The densities of energy states extended, localized and at Fermi level were calculated for different samples of antimony. It was Found that the extended states changed from 1.650 × 1024 to 2.159 × 1027, while local states, it changed from 2.881 × 1020 to 5.259 × 1023, as for the Fermi level, the density of states changed from 5.033 × 1021 to 1.571 × 1021 when the antimony concentration increased from 0 to 20 respectively . The activation energy was also calculated and found that in the extended state it changes from 0.223 to 0.557, and for the local case, the activation energy changes from 0.159 to 0.515 and at the Fermi level it changes from 0.151 to 0.332 when the antimony concentration is increased from zero to 20. As for the width of the energy tails, it was found that they are in a decreasing state, and this indicates that the randomness of the compound is decreasing, that is, it has become more crystalline.