Investigation on Localized Etching Behaviors of Polymer Film by Atmospheric Pressure Plasma Jets

This paper investigates the effect of physical bombardment, chemical reaction etching and ultraviolet (UV) radiation on polymer film etching by atmospheric pressure He, O 2 and He/O 2 plasma jets. Physical morphologies and chemical compositions of the etched surfaces were analyzed. It was found that in the absence of oxygen-containing reactive species, the etched polymer surface was rough with ultra-low etching rate by He plasma jet, and the chemical compositions of the etched surface kept unchanged in this condition. UV radiation played the minimum role in the etching process and it only modify the film surface through photooxidation. Rapid and effective etching can only be achieved by the synergistic effects of charged particle’s bombardment, chemical reaction etching of reactive species and UV radiation. The results can provide reference for deeper understanding and better controlling the etching process of polymer films by an atmospheric pressure plasma jet. Graphical Abstract