Performance of deep ultraviolet laser diode based on well-type ladder electron barrier

In order to effectively reduce the electron leakage of deep ultraviolet laser diode（DUV-LD）in the active region, a well-type ladder electron blocking layer（EBL） structure is proposed. Crosslight software is used to simulate three different structures of EBLs, namely, rectangle type, ladder type and well-type, respectively, and the energy band diagram, radiation recombination rate, electron hole concentration, P-I and V-I characteristics of the three structure devices are compared and analyzed in detail. It is found that the well-type ladder EBL has the best suppression effect on the leakage of electrons,leading to the improved optical and electrical properties of the DUV-LD device.