Low-Temperature Sintering Properties of Bi2O3 Doped PZT-5H Piezoelectric Ceramics

Due to its excellent piezoelectric characteristics and Curie temperatures, PZT-5H piezoelectric ceramics are perfect for creating low-temperature co-fired multilayer devices. The effects of Bi 2 O 3 doping on the low-temperature sintering properties of PZT-5H ceramic powder were investigated in this work. When the mass fraction of Bi 2 O 3 is 0.9%, PZT-5H ceramics can be completely sintered at 850°C. In addition, the chemical composition exhibits the best electrical properties at this doping level and lies at the morphological phase boundary (MPB). The property is as follows: d 33 = 504pC/N, tan δ = 0.0296, k p = 0.653, Q m = 30.983, and T c = 230°C. A multilayer piezoelectric ceramic actuator was created in this work to better demonstrate the real-world applications of using this material in low-temperature co-fired devices. The multilayer piezoelectric actuator’s characterization revealed that the material was tightly attached to the Ag electrode, and that there was minimal Ag diffusion at the bond, with satisfactory co-firing matching. At a drive voltage of 600 V, the multilayer actuator produced a displacement of 2.18 μ m and a strain value of 0.109%. This showed that it was feasible to create multilayer piezoelectric ceramic actuators with this material, and that it provides a new alternative material for creating other multilayer piezoelectric ceramic devices.