Intact Metal/Metal Halide van der Waals Junction Enables Reliable Memristive Switching with High Endurance

Organic–inorganic or inorganic metal halide materials have emerged as a promising candidate for a resistive switching material owing to their ability to achieve low operating voltage, high on–off ratio, and multi‐level switching. However, the high switching variation, limited endurance, and poor reproducibility of the device hinder practical use of the memristors. In this study, a universal approach to address the issues using a van der Waals metal contact (vdWC) is reported. By transferring the pre‐deposited metal contact onto the active layers, an intact junction between the metal halide and contact layer is formed without unintended damage to the active layer caused by a conventional physical deposition process of the metal contacts. Compared with the thermally evaporated metal contact (EVC), the vdWC does not degrade the optoelectronic quality of the underlying layer to enable memristors with reduced switching variation, significantly enhanced endurance, and reproducibility relative to those based on the EVC. By adopting various metal halide active layers, versatile utility of the vdWC is demonstrated. Thus, this vdWC approach can be a useful platform technology for the development of high‐performance and reliable memristors for future computing. Conventional physical vapor deposition of metal contacts causes unintended damage to the underlying organic–inorganic hybrid active layers. Herein, a systematic investigation reveals the detrimental effects of the metal contact deposition processes on the performance, stability, and reliability of memristor devices. The van der Waals metal contact approach is found to be universally applicable for dramatically relieving these issues.