Dielectric Interface Engineering for High-Performance Monolayer MoS2 Transistors via TaOxInterfacial Layer

Field-effect transistors (FETs) based on 2-D materials have great potential for future ultimate-scaled electronics. However, nonideal semiconductor–dielectric interfaces due to interfacial traps and oxide traps have constrained the potential of 2-D semiconductors. Here, we report a new dielectric in...

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Veröffentlicht in:	IEEE transactions on electron devices 2023-01, Vol.70 (4), p.2067
Hauptverfasser:	Hao-Yu, Lan, Oleshko, Vladimir P, Davydov, Albert V, Appenzeller, Joerg, Chen, Zhihong
Format:	Artikel
Sprache:	eng
Schlagworte:	Contact resistance Dielectrics Field effect transistors Interfaces Molybdenum disulfide Monolayers Semiconductor devices Transistors Two dimensional materials
Online-Zugang:	Volltext
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