Effect of Uniform Strain on Graphene Surface Plasmon Excitations

This paper reports a study of the reflectance of the optical sensors based on graphene under uniform strain. Assuming the graphene layer is surrounded by two different semi-infinite dielectric media, the generalized Fresnel coefficients are derived as a function of usual quantities (e.g., dielectric constants, incident angles, and strain) and anisotropic optical conductivity. The strain not only changes the electronic band structure but also can be employed to tune the electronic collective excitations (plasmons) and thus the optical reflectance of graphene monolayers. One of the most common techniques for plasmon excitation is the Kretschmann configuration. It is based on the observation of a sharp minimum in the reflection coefficient versus the angle (or wavelength) curve. Because strain induces anisotropy in graphene optical conductivity the strain-dependent orientation plays an important role to manipulate the variation of graphene plasmon energy, which may be useful to synchronize graphene properties in plasmonic devices to enhance light-matter interactions.