Strong Magnetic Field Annealing for Improved Phthalocyanine Organic Thin‐Film Transistors (Small 12/2023)

Improved Phthalocyanine Organic Thin‐Film Transistors A strong, static magnetic field is demonstrated to make favorable, directionally controlled, changes to phthalocyanine thin‐film microstructures, improving charge transport, and increasing organic thin‐film transistor performance by two‐fold. Com...

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Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2023-03, Vol.19 (12), p.n/a
Hauptverfasser: Comeau, Zachary J., Cranston, Rosemary R., Lamontagne, Halynne R., Shuhendler, Adam J., Lessard, Benoît H.
Format: Artikel
Sprache:eng
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Zusammenfassung:Improved Phthalocyanine Organic Thin‐Film Transistors A strong, static magnetic field is demonstrated to make favorable, directionally controlled, changes to phthalocyanine thin‐film microstructures, improving charge transport, and increasing organic thin‐film transistor performance by two‐fold. Compared to thermal or solvent vapor annealing, which can be difficult to control or destructive to electronic device substrates, magnetic field annealing is presented as a non‐destructive alternative post‐deposition process. More details can be found in article number 2206792 by Adam J. Shuhendler, Benoît H. Lessard, and co‐workers.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.202370076