Transparent p-type layer with highly reflective Rh/Al p-type electrodes for improving the performance of AlGaN-based deep-ultraviolet light-emitting diodes
We attempt to improve the light extraction of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) by introducing a highly transparent p-type layer together with reflective Rh/Al p-type electrodes. The p-GaN contact layer is thinned to balance the Ohmic contact and DUV light transmittance,...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2023-03, Vol.62 (3), p.30904 |
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Hauptverfasser: | , , , , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We attempt to improve the light extraction of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) by introducing a highly transparent p-type layer together with reflective Rh/Al p-type electrodes. The p-GaN contact layer is thinned to balance the Ohmic contact and DUV light transmittance, which helps the Rh/Al p-type electrodes realize high reflection as well as good electrical performance. After optimization, the Rh/Al reflective p-type electrodes present reflectance of greater than 70% and specific contact resistivity of 3.75 × 10
−4
Ω·cm
2
. Due to the improvement in the light extraction efficiency, the highest wall-plug efficiency of 278 nm DUV-LEDs is improved by 57% compared to the conventional configuration with Ni/Au as the p-type electrodes. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.35848/1347-4065/acbf14 |