The hyperfine energy spectrum of31P donors in a silicon NMR quantum computer
The effect of an electric field on the hyperfine interaction constant (HIC) of a donor atom is considered within the silicon quantum computer model. The field is produced by the potential of a circular (disk-shaped) or strip gate. A spread in the HIC values because of inaccurately placing donor atom...
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Veröffentlicht in: | Russian microelectronics 2000-09, Vol.29 (5), p.285-293 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The effect of an electric field on the hyperfine interaction constant (HIC) of a donor atom is considered within the silicon quantum computer model. The field is produced by the potential of a circular (disk-shaped) or strip gate. A spread in the HIC values because of inaccurately placing donor atoms under the gate is estimated. The energy spectrum of the electron-nuclear spin system for two interacting donor atoms with different HICs is evaluated. Two pairs of levels anticrossing in the ground state are shown to exist. |
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ISSN: | 1063-7397 1608-3415 |
DOI: | 10.1007/BF02773277 |