The hyperfine energy spectrum of31P donors in a silicon NMR quantum computer

The effect of an electric field on the hyperfine interaction constant (HIC) of a donor atom is considered within the silicon quantum computer model. The field is produced by the potential of a circular (disk-shaped) or strip gate. A spread in the HIC values because of inaccurately placing donor atom...

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Veröffentlicht in:Russian microelectronics 2000-09, Vol.29 (5), p.285-293
Hauptverfasser: Valiev, K. A., Kokin, A. A., Larionov, A. A., Fedichkin, L. E.
Format: Artikel
Sprache:eng
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Zusammenfassung:The effect of an electric field on the hyperfine interaction constant (HIC) of a donor atom is considered within the silicon quantum computer model. The field is produced by the potential of a circular (disk-shaped) or strip gate. A spread in the HIC values because of inaccurately placing donor atoms under the gate is estimated. The energy spectrum of the electron-nuclear spin system for two interacting donor atoms with different HICs is evaluated. Two pairs of levels anticrossing in the ground state are shown to exist.
ISSN:1063-7397
1608-3415
DOI:10.1007/BF02773277