Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon

Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon

Diffusion from a layer of gallium phosphide GaP deposited onto a silicon surface is studied. After diffusion, the silicon samples are examined using the Van der Pauw method and a scanning electron microscopy in order to determine the concentration distribution of impurity atoms of phosphorus and gal...

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Veröffentlicht in:Physics of the solid state 2022-11, Vol.64 (11), p.587-594
Hauptverfasser: Zikrillaev, N. F., Koveshnikov, S. V., Turekeev, Kh. S., Norkulov, N., Tachilin, S. A.
Format: Artikel
Sprache:eng
Schlagworte:
Diffusion layers
Gallium compounds
Gallium phosphides
Phosphorus
Physics
Physics and Astronomy
Semiconductors
Silicon
Solid State Physics
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Beschreibung
Zusammenfassung:Diffusion from a layer of gallium phosphide GaP deposited onto a silicon surface is studied. After diffusion, the silicon samples are examined using the Van der Pauw method and a scanning electron microscopy in order to determine the concentration distribution of impurity atoms of phosphorus and gallium.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783422110154