Structure and transport properties of rapidly quenched Ge-doped Bi0.85Sb0.15 foils

Structure and transport properties of rapidly quenched Ge-doped Bi0.85Sb0.15 foils

Ge-doped Bi0.85Sb0.15 foils (0.2,0.4, and 0.8 at. % Ge) prepared by quenching from the liquid state feature a strong (1012) texture, correlating with the orientation of covalent bonds in the structure of the alloy. Electrical measurements demonstrate that the Ge dopant in Bi0.85Sb0.15 acts as an acc...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Inorganic materials 2000-11, Vol.36 (11), p.1081-1082
Hauptverfasser: GRECHANNIKOV, E. E, SHEPELEVICH, V. G
Format: Artikel
Sprache:eng
Schlagworte:
Bonding strength
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Covalent bonds
Electrical measurement
Electronic transport in condensed matter
Exact sciences and technology
Foils
Germanium
Low-field transport and mobility
piezoresistance
Physics
Rapid quenching (metallurgy)
Thermoelectric and thermomagnetic effects
Transport properties
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Ge-doped Bi0.85Sb0.15 foils (0.2,0.4, and 0.8 at. % Ge) prepared by quenching from the liquid state feature a strong (1012) texture, correlating with the orientation of covalent bonds in the structure of the alloy. Electrical measurements demonstrate that the Ge dopant in Bi0.85Sb0.15 acts as an acceptor.
ISSN:0020-1685
1608-3172
DOI:10.1007/BF02758918