Theoretical foundations of galvanic treatment of dielectrics and semiconductors in ionic melts

The behaviors of diamond, cubic boron nitride, and silicon and boron carbides in ionic melts were analyzed thermodynamically and studied by potentiometry and corrosion measurements. The redox reactions occurring at the dielectric (semiconductor)/ionic melt interface were assumed to give rise to an electrochemical potential and surface conductivity. Controllability of the electrochemical potential makes metallization of the materials considered possible. Techniques are suggested for the electrodeposition of molybdenum, tungsten, and their carbides onto diamond, boron nitride, silicon carbide, and boron carbide particles.