Analysis of defect formation in Si3N4 films

Analysis of defect formation in Si3N4 films

The formation of Frenkel defects in silicon nitride films is analyzed in the quasi-chemical approach by solving the system of equations describing defect formation in Si3N4 films at different electroneutrality conditions. The concentrations of various defects species are calculated as a function of...

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Veröffentlicht in:Inorganic materials 2000-02, Vol.36 (2), p.162-166
Hauptverfasser: Garshin, A. P., Shvaiko-Shvaikovskii, V. E., Ugolkov, V. L.
Format: Artikel
Sprache:eng
Schlagworte:
Frenkel defects
Silicon nitride
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Beschreibung
Zusammenfassung:The formation of Frenkel defects in silicon nitride films is analyzed in the quasi-chemical approach by solving the system of equations describing defect formation in Si3N4 films at different electroneutrality conditions. The concentrations of various defects species are calculated as a function of equilibrium nitrogen pressure.
ISSN:0020-1685
1608-3172
DOI:10.1007/BF02758019