SiV Centers Electroluminescence in Diamond Merged Diode

The results of a study of electroluminescence of silicon vacancy color centers (SiV centers) in a diamond merged diode with a structure involving parallel connection of a p–i–n diode and a Schottky diode are presented. To create color centers, the inner region of the diode is doped with silicon. In...

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Veröffentlicht in:	Physica status solidi. PSS-RRL. Rapid research letters 2023-03, Vol.17 (3), p.n/a
Hauptverfasser:	Lobaev, Mikhail Aleksandrovich, Radishev, Dmitry Borisovich, Vikharev, Anatoly Leontievich, Gorbachev, Alexey Mikhailovich, Bogdanov, Sergey Aleksandrovich, Isaev, Vladimir Aleksandrovich, Kraev, Stanislav Alekseevich, Okhapkin, Andrey Igorevich, Arkhipova, Ekaterina Aleksandrovna, Demidov, Evgeniy Valentinovich, Drozdov, Mikhail Nikolaevich
Format:	Artikel
Sprache:	eng
Schlagworte:	chemical vapor deposition (CVD) growth Color centers Current carriers diamond doping diamond p–i–n diodes Diamonds Electroluminescence Emission Photoluminescence Schottky diodes Silicon SiV center electroluminescence
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