SiV Centers Electroluminescence in Diamond Merged Diode

The results of a study of electroluminescence of silicon vacancy color centers (SiV centers) in a diamond merged diode with a structure involving parallel connection of a p–i–n diode and a Schottky diode are presented. To create color centers, the inner region of the diode is doped with silicon. In the luminescence spectrum, only a line at a wavelength of 738 nm is detected, corresponding to the emission of a SiV color center in a negative charge state. Emission at a wavelength of 946 nm, corresponding to the SiV color center in the neutral charge state, is not detected. The electroluminescence of color centers is observed only in the p–i–n region of the diode, that is, it is experimentally demonstrated that both types of charge carriers are necessary to excite electroluminescence. A pronounced dependence of the photoluminescence intensity of SiV centers on the applied voltage is found. Electroluminescence of SiV centers in a diamond merged diode with a structure involving the parallel connection of a p–i–n diode and a Schottky diode is investigated. It is shown that both types of charge carriers are necessary for the generation of radiation in the process of electroluminescence.