Study of short-wavelength red semiconductor laser using high Ga composition GaInP quantum well based on Ge/SiGe substrate

To meet the increasing demand of short-wavelength red lasers for laser display technology and medical applications, we propose a new short-wavelength red semiconductor laser structure. The laser uses Ge/SiGe as the substrate and GaInP, AlInP and other group III-V materials as the main structural layers. The composition of Ge is adjusted to change the lattice constant of the SiGe layer according to the needs of GaInP strain quantum well design to achieve a short-wavelength red laser. A semiconductor laser with a wavelength of 620 nm is used as an example, and the effect of both the interfacial state and the GaInP-strained quantum well on the device characteristics is discussed through simulation. It is found that the laser structure has the optimal output characteristics when the quantum well is subjected to 0.32% compressive strain under the conditions of the interfacial state, which indicates the feasibility of this laser structure design scheme.