Effect of a Built-in Electric Field on the Photoluminescence Spectra of Elastically Strained InGaAs/GaAs Superlattices on GaAs (110) and (111)A Substrates

The manifestation of the piezoelectric effect in the photoluminescence spectra of superlattices with elastically strained {In x Ga 1 –  x As/GaAs} quantum wells grown by molecular-beam epitaxy on GaAs substrates with the crystallographic surface orientations (100), (110), and (111)A is reported.

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Veröffentlicht in:Nanobiotechnology Reports (Online) 2022-12, Vol.17 (Suppl 1), p.S41-S44
Hauptverfasser: Klimov, E. A., Pushkarev, S. S., Klochkov, A. N.
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creator Klimov, E. A.
Pushkarev, S. S.
Klochkov, A. N.
description The manifestation of the piezoelectric effect in the photoluminescence spectra of superlattices with elastically strained {In x Ga 1 –  x As/GaAs} quantum wells grown by molecular-beam epitaxy on GaAs substrates with the crystallographic surface orientations (100), (110), and (111)A is reported.
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identifier ISSN: 2635-1676
ispartof Nanobiotechnology Reports (Online), 2022-12, Vol.17 (Suppl 1), p.S41-S44
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2635-1684
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subjects Chemistry and Materials Science
Crystallography
Electric fields
Epitaxial growth
Gallium arsenide
Industrial and Production Engineering
Machines
Manufacturing
Materials Science
Molecular beam epitaxy
Nanotechnology
Photoluminescence
Piezoelectricity
Processes
Quantum wells
Spectra
Substrates
Superlattices
title Effect of a Built-in Electric Field on the Photoluminescence Spectra of Elastically Strained InGaAs/GaAs Superlattices on GaAs (110) and (111)A Substrates
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