Effect of a Built-in Electric Field on the Photoluminescence Spectra of Elastically Strained InGaAs/GaAs Superlattices on GaAs (110) and (111)A Substrates
The manifestation of the piezoelectric effect in the photoluminescence spectra of superlattices with elastically strained {In x Ga 1 – x As/GaAs} quantum wells grown by molecular-beam epitaxy on GaAs substrates with the crystallographic surface orientations (100), (110), and (111)A is reported.
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Veröffentlicht in: | Nanobiotechnology Reports (Online) 2022-12, Vol.17 (Suppl 1), p.S41-S44 |
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creator | Klimov, E. A. Pushkarev, S. S. Klochkov, A. N. |
description | The manifestation of the piezoelectric effect in the photoluminescence spectra of superlattices with elastically strained {In
x
Ga
1 –
x
As/GaAs} quantum wells grown by molecular-beam epitaxy on GaAs substrates with the crystallographic surface orientations (100), (110), and (111)A is reported. |
doi_str_mv | 10.1134/S2635167622070126 |
format | Article |
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Ga
1 –
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x
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As/GaAs} quantum wells grown by molecular-beam epitaxy on GaAs substrates with the crystallographic surface orientations (100), (110), and (111)A is reported.</description><subject>Chemistry and Materials Science</subject><subject>Crystallography</subject><subject>Electric fields</subject><subject>Epitaxial growth</subject><subject>Gallium arsenide</subject><subject>Industrial and Production Engineering</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Materials Science</subject><subject>Molecular beam epitaxy</subject><subject>Nanotechnology</subject><subject>Photoluminescence</subject><subject>Piezoelectricity</subject><subject>Processes</subject><subject>Quantum wells</subject><subject>Spectra</subject><subject>Substrates</subject><subject>Superlattices</subject><issn>2635-1676</issn><issn>1995-0780</issn><issn>2635-1684</issn><issn>1995-0799</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp1kU1OwzAQhSMEElXpAdhZYkMXof5J7GRZqrZUqgRSYB05zpimcpNiOwuuwmlxKIIFYjMzev7eG8kTRdcE3xHCkllBOUsJF5xSLDCh_CwaDVJMeJac_8yCX0YT5_YYYyoIppiPoo-l1qA86jSS6L5vjI-bFi1N0Gyj0KoBU6OuRX4H6GnX-c70h6YFp6BVgIrjwMnBvTTS-UZJY95REbQA1WjTruXczYaCiv4I1kgfIHBD5Jd6SwieItnWw0Sm84BVLtg9uKvoQkvjYPLdx9HLavm8eIi3j-vNYr6NFeWZjzXDdVprrXLAqmICV6nCmoUPSUimKqpFXnHGGFRpeM9VIpTMMoIBBBFUczaObk65R9u99eB8ue9624aVJRUZ4XnCUxwocqKU7ZyzoMujbQ7SvpcEl8MVyj9XCB568rjAtq9gf5P_N30CMY-Hjw</recordid><startdate>20221201</startdate><enddate>20221201</enddate><creator>Klimov, E. A.</creator><creator>Pushkarev, S. S.</creator><creator>Klochkov, A. N.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20221201</creationdate><title>Effect of a Built-in Electric Field on the Photoluminescence Spectra of Elastically Strained InGaAs/GaAs Superlattices on GaAs (110) and (111)A Substrates</title><author>Klimov, E. A. ; Pushkarev, S. S. ; Klochkov, A. N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c268t-f30d5dffc9e0cb370b5c0f3351418cb2f79b6333eb50cb9c47ca8810ee7172f63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Chemistry and Materials Science</topic><topic>Crystallography</topic><topic>Electric fields</topic><topic>Epitaxial growth</topic><topic>Gallium arsenide</topic><topic>Industrial and Production Engineering</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Materials Science</topic><topic>Molecular beam epitaxy</topic><topic>Nanotechnology</topic><topic>Photoluminescence</topic><topic>Piezoelectricity</topic><topic>Processes</topic><topic>Quantum wells</topic><topic>Spectra</topic><topic>Substrates</topic><topic>Superlattices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Klimov, E. A.</creatorcontrib><creatorcontrib>Pushkarev, S. S.</creatorcontrib><creatorcontrib>Klochkov, A. N.</creatorcontrib><collection>CrossRef</collection><jtitle>Nanobiotechnology Reports (Online)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Klimov, E. A.</au><au>Pushkarev, S. S.</au><au>Klochkov, A. N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of a Built-in Electric Field on the Photoluminescence Spectra of Elastically Strained InGaAs/GaAs Superlattices on GaAs (110) and (111)A Substrates</atitle><jtitle>Nanobiotechnology Reports (Online)</jtitle><stitle>Nanotechnol Russia</stitle><date>2022-12-01</date><risdate>2022</risdate><volume>17</volume><issue>Suppl 1</issue><spage>S41</spage><epage>S44</epage><pages>S41-S44</pages><issn>2635-1676</issn><issn>1995-0780</issn><eissn>2635-1684</eissn><eissn>1995-0799</eissn><abstract>The manifestation of the piezoelectric effect in the photoluminescence spectra of superlattices with elastically strained {In
x
Ga
1 –
x
As/GaAs} quantum wells grown by molecular-beam epitaxy on GaAs substrates with the crystallographic surface orientations (100), (110), and (111)A is reported.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S2635167622070126</doi></addata></record> |
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subjects | Chemistry and Materials Science Crystallography Electric fields Epitaxial growth Gallium arsenide Industrial and Production Engineering Machines Manufacturing Materials Science Molecular beam epitaxy Nanotechnology Photoluminescence Piezoelectricity Processes Quantum wells Spectra Substrates Superlattices |
title | Effect of a Built-in Electric Field on the Photoluminescence Spectra of Elastically Strained InGaAs/GaAs Superlattices on GaAs (110) and (111)A Substrates |
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