Effect of a Built-in Electric Field on the Photoluminescence Spectra of Elastically Strained InGaAs/GaAs Superlattices on GaAs (110) and (111)A Substrates

The manifestation of the piezoelectric effect in the photoluminescence spectra of superlattices with elastically strained {In x Ga 1 – x As/GaAs} quantum wells grown by molecular-beam epitaxy on GaAs substrates with the crystallographic surface orientations (100), (110), and (111)A is reported.

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Veröffentlicht in:	Nanobiotechnology Reports (Online) 2022-12, Vol.17 (Suppl 1), p.S41-S44
Hauptverfasser:	Klimov, E. A., Pushkarev, S. S., Klochkov, A. N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry and Materials Science Crystallography Electric fields Epitaxial growth Gallium arsenide Industrial and Production Engineering Machines Manufacturing Materials Science Molecular beam epitaxy Nanotechnology Photoluminescence Piezoelectricity Processes Quantum wells Spectra Substrates Superlattices
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Beschreibung
Zusammenfassung:	The manifestation of the piezoelectric effect in the photoluminescence spectra of superlattices with elastically strained {In x Ga 1 – x As/GaAs} quantum wells grown by molecular-beam epitaxy on GaAs substrates with the crystallographic surface orientations (100), (110), and (111)A is reported.
ISSN:	2635-1676 1995-0780 2635-1684 1995-0799
DOI:	10.1134/S2635167622070126