Doping Effect of Ca2+ Ions on the Electric and Magnetic Properties of Aurivillius CaxBi6–xFe0.5Co0.5Ti4O18 Thin Films Prepared by Chemical Solution Deposition

Doping with different valence ions in Aurivillius compounds can induce lattice distortion and further affect the ferroelectric and magnetic properties of the materials. In this work, Ca x Bi 6– x Fe 0.5 Co 0.5 Ti 4 O 18 thin films were prepared to study the influence of the substitution of Ca 2+ for Bi 3+ on the microstructure and the dielectric, ferroelectric, leakage, and magnetic properties. The results show that the lattice distortion and the internal stress are both increased with increasing Ca 2+ doping level. The dielectric and ferroelectric measurements suggest that the film with a low doping concentration ( x = 0.2) exhibits better performance than the films with higher doping concentrations. Although lattice distortion and valence changes in the ions have been produced, which may have affected the distortion of the A/B-O octahedral crystal structure, tests of magnetic properties demonstrate that no regular changes are caused by the Ca 2+ doping. Graphical Abstract