Low temperature interfacial reaction in 3D IC nanoscale materials
In this review, we cover copper-to-copper (Cu-to-Cu) direct bonding, point contact reaction between silicon (Si) nanowire and metal nanowire, and cold welding of gold (Au) and silver (Ag) nanowires. All of them occur under nanoscale interfaces at low temperatures. For a broader consideration, becaus...
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Veröffentlicht in: | Materials science & engineering. R, Reports : a review journal Reports : a review journal, 2022-10, Vol.151, p.100701, Article 100701 |
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creator | Liu, Yingxia Lu, Yang Tu, K.N. |
description | In this review, we cover copper-to-copper (Cu-to-Cu) direct bonding, point contact reaction between silicon (Si) nanowire and metal nanowire, and cold welding of gold (Au) and silver (Ag) nanowires. All of them occur under nanoscale interfaces at low temperatures. For a broader consideration, because Cu is known to exhibit significant anti-pathogen and anti-viral properties, the interfacial reaction in Cu nano-grain metallurgy may be used to manufacture Cu and Cu alloy products to reduce virus transmission, which can have a very large impact to our society. Furthermore, in the future semiconductor technology, because of dense packaging, Joule heating will be serious. Thus, low entropy production process will receive attention, which means low temperature joining technology such as cold welding and nano-welding will be important. |
doi_str_mv | 10.1016/j.mser.2022.100701 |
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All of them occur under nanoscale interfaces at low temperatures. For a broader consideration, because Cu is known to exhibit significant anti-pathogen and anti-viral properties, the interfacial reaction in Cu nano-grain metallurgy may be used to manufacture Cu and Cu alloy products to reduce virus transmission, which can have a very large impact to our society. Furthermore, in the future semiconductor technology, because of dense packaging, Joule heating will be serious. Thus, low entropy production process will receive attention, which means low temperature joining technology such as cold welding and nano-welding will be important.</description><identifier>ISSN: 0927-796X</identifier><identifier>EISSN: 1879-212X</identifier><identifier>DOI: 10.1016/j.mser.2022.100701</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Bonding ; Cold welding ; Copper ; Copper base alloys ; Cu-to-Cu direct bonding ; Disease control ; Gold ; Integrated circuits ; Interface reactions ; Low temperature ; Metallurgy ; Nano welding ; Nanowires ; Ohmic dissipation ; Point contact ; Point contact reaction ; Pulley-type contacts ; Resistance heating ; Silicon ; Silver ; Surface creep</subject><ispartof>Materials science & engineering. R, Reports : a review journal, 2022-10, Vol.151, p.100701, Article 100701</ispartof><rights>2022 Elsevier B.V.</rights><rights>Copyright Elsevier BV Oct 2022</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c258t-64dac8938a37b9d95014d9efa49515dbe4d3a230b3d8c6344b02bef33a877d4b3</citedby><cites>FETCH-LOGICAL-c258t-64dac8938a37b9d95014d9efa49515dbe4d3a230b3d8c6344b02bef33a877d4b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mser.2022.100701$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3541,27915,27916,45986</link.rule.ids></links><search><creatorcontrib>Liu, Yingxia</creatorcontrib><creatorcontrib>Lu, Yang</creatorcontrib><creatorcontrib>Tu, K.N.</creatorcontrib><title>Low temperature interfacial reaction in 3D IC nanoscale materials</title><title>Materials science & engineering. R, Reports : a review journal</title><description>In this review, we cover copper-to-copper (Cu-to-Cu) direct bonding, point contact reaction between silicon (Si) nanowire and metal nanowire, and cold welding of gold (Au) and silver (Ag) nanowires. All of them occur under nanoscale interfaces at low temperatures. For a broader consideration, because Cu is known to exhibit significant anti-pathogen and anti-viral properties, the interfacial reaction in Cu nano-grain metallurgy may be used to manufacture Cu and Cu alloy products to reduce virus transmission, which can have a very large impact to our society. Furthermore, in the future semiconductor technology, because of dense packaging, Joule heating will be serious. Thus, low entropy production process will receive attention, which means low temperature joining technology such as cold welding and nano-welding will be important.</description><subject>Bonding</subject><subject>Cold welding</subject><subject>Copper</subject><subject>Copper base alloys</subject><subject>Cu-to-Cu direct bonding</subject><subject>Disease control</subject><subject>Gold</subject><subject>Integrated circuits</subject><subject>Interface reactions</subject><subject>Low temperature</subject><subject>Metallurgy</subject><subject>Nano welding</subject><subject>Nanowires</subject><subject>Ohmic dissipation</subject><subject>Point contact</subject><subject>Point contact reaction</subject><subject>Pulley-type contacts</subject><subject>Resistance heating</subject><subject>Silicon</subject><subject>Silver</subject><subject>Surface creep</subject><issn>0927-796X</issn><issn>1879-212X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLxDAUhYMoOI7-AVcB1x3zatOAm2F8DQy4UZhdSJNbSJk2Y9Iq_nsz1LWrA-d-597LQeiWkhUltLrvVn2CuGKEsWwQSegZWtBaqoJRtj9HC6KYLKSq9pfoKqWOEMJEWS7Qehe-8Qj9EaIZpwjYDyPE1lhvDjiCsaMPQzYxf8TbDR7MEJI1B8C9yVyG0jW6aLPAzZ8u0cfz0_vmtdi9vWw3611hWVmPRSWcsbXiteGyUU6VhAqnoDVClbR0DQjHDeOk4a62FReiIayBlnNTS-lEw5fobt57jOFzgjTqLkxxyCc1kzURQvKKZ4rNlI0hpQitPkbfm_ijKdGnqnSnT1XpU1V6riqHHuYQ5P-_fJ4m62Gw4HwEO2oX_H_xX_QbcWI</recordid><startdate>202210</startdate><enddate>202210</enddate><creator>Liu, Yingxia</creator><creator>Lu, Yang</creator><creator>Tu, K.N.</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>202210</creationdate><title>Low temperature interfacial reaction in 3D IC nanoscale materials</title><author>Liu, Yingxia ; Lu, Yang ; Tu, K.N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c258t-64dac8938a37b9d95014d9efa49515dbe4d3a230b3d8c6344b02bef33a877d4b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Bonding</topic><topic>Cold welding</topic><topic>Copper</topic><topic>Copper base alloys</topic><topic>Cu-to-Cu direct bonding</topic><topic>Disease control</topic><topic>Gold</topic><topic>Integrated circuits</topic><topic>Interface reactions</topic><topic>Low temperature</topic><topic>Metallurgy</topic><topic>Nano welding</topic><topic>Nanowires</topic><topic>Ohmic dissipation</topic><topic>Point contact</topic><topic>Point contact reaction</topic><topic>Pulley-type contacts</topic><topic>Resistance heating</topic><topic>Silicon</topic><topic>Silver</topic><topic>Surface creep</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Yingxia</creatorcontrib><creatorcontrib>Lu, Yang</creatorcontrib><creatorcontrib>Tu, K.N.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials science & engineering. R, Reports : a review journal</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Yingxia</au><au>Lu, Yang</au><au>Tu, K.N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low temperature interfacial reaction in 3D IC nanoscale materials</atitle><jtitle>Materials science & engineering. R, Reports : a review journal</jtitle><date>2022-10</date><risdate>2022</risdate><volume>151</volume><spage>100701</spage><pages>100701-</pages><artnum>100701</artnum><issn>0927-796X</issn><eissn>1879-212X</eissn><abstract>In this review, we cover copper-to-copper (Cu-to-Cu) direct bonding, point contact reaction between silicon (Si) nanowire and metal nanowire, and cold welding of gold (Au) and silver (Ag) nanowires. All of them occur under nanoscale interfaces at low temperatures. For a broader consideration, because Cu is known to exhibit significant anti-pathogen and anti-viral properties, the interfacial reaction in Cu nano-grain metallurgy may be used to manufacture Cu and Cu alloy products to reduce virus transmission, which can have a very large impact to our society. Furthermore, in the future semiconductor technology, because of dense packaging, Joule heating will be serious. Thus, low entropy production process will receive attention, which means low temperature joining technology such as cold welding and nano-welding will be important.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.mser.2022.100701</doi></addata></record> |
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subjects | Bonding Cold welding Copper Copper base alloys Cu-to-Cu direct bonding Disease control Gold Integrated circuits Interface reactions Low temperature Metallurgy Nano welding Nanowires Ohmic dissipation Point contact Point contact reaction Pulley-type contacts Resistance heating Silicon Silver Surface creep |
title | Low temperature interfacial reaction in 3D IC nanoscale materials |
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