Low temperature interfacial reaction in 3D IC nanoscale materials

In this review, we cover copper-to-copper (Cu-to-Cu) direct bonding, point contact reaction between silicon (Si) nanowire and metal nanowire, and cold welding of gold (Au) and silver (Ag) nanowires. All of them occur under nanoscale interfaces at low temperatures. For a broader consideration, becaus...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Materials science & engineering. R, Reports : a review journal Reports : a review journal, 2022-10, Vol.151, p.100701, Article 100701
Hauptverfasser: Liu, Yingxia, Lu, Yang, Tu, K.N.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this review, we cover copper-to-copper (Cu-to-Cu) direct bonding, point contact reaction between silicon (Si) nanowire and metal nanowire, and cold welding of gold (Au) and silver (Ag) nanowires. All of them occur under nanoscale interfaces at low temperatures. For a broader consideration, because Cu is known to exhibit significant anti-pathogen and anti-viral properties, the interfacial reaction in Cu nano-grain metallurgy may be used to manufacture Cu and Cu alloy products to reduce virus transmission, which can have a very large impact to our society. Furthermore, in the future semiconductor technology, because of dense packaging, Joule heating will be serious. Thus, low entropy production process will receive attention, which means low temperature joining technology such as cold welding and nano-welding will be important.
ISSN:0927-796X
1879-212X
DOI:10.1016/j.mser.2022.100701