Full-Color AC-Driven Electroluminescences From Rare Earths-Doped ZnGa2O4 in MOS Structure

[Formula Omitted], a wide bandgap ternary oxide material, has recently attracted scientific attention in optoelectronics, especially for electroluminescent (EL) devices. It is well-known as a good host material for transition metals and rare earths (REs) elements. Herein, the full-color red-green-blue (RGB) EL devices are introduced using REs-doped [Formula Omitted] (RZGO), REs = [Formula Omitted], [Formula Omitted], and [Formula Omitted], in a metal-oxide-semiconductor (MOS) structure. The RZGO MOS-EL devices were deposited on the silicon substrate through a facile all-solution precursor in an air atmosphere annealing solid-state reaction method. It is formed as a spinel crystallized [Formula Omitted] accompanied by amorphous SiOx. Under alternating-current sinusoidal waveform, the EL devices emit full-color RGB spectra which are optically attributed to the spin-allowed and spin-forbidden transitions of [Formula Omitted], [Formula Omitted], and [Formula Omitted] ions within the [Formula Omitted] host lattice. The optical performances of the RZGO MOS-EL devices are presented according to various applied sinusoidal voltages. Finally, this study could provide a feasible application of the realization of [Formula Omitted] material for a full-color RGB large-area emitting device based on the MOS structure in silicon electronics.