Development and characterization of atom chip for magnetic trapping of atoms

In this work, we report the development and characterization of an atom chip for magnetic trapping of cold 87 Rb atoms. For fabrication of the atom chip, a silicon substrate was used after depositing an insulating layer of silica ( SiO 2) on it. An adhesive chromium layer was further deposited on this substrate before the deposition of the final layer of gold. On this gold coated substrate, a z-shaped gold wire (cross section, 500 × 2.5 μ m 2) was fabricated by a photo-chemical machining method. The chip wire was tested for current–voltage characteristics for its reliable operation in magnetic trapping. The atoms from an U-magneto-optical trap, after optical pumping, were directly trapped in the magnetic trap of the atom chip.