A Study of Complex Defect Formation in Silicon Doped With Nickel

The behavior of nickel and hydrogen impurities in silicon is studied by the methods of deep-level transient spectroscopy (DLTS) and Raman spectroscopy. It is shown that the vibrations of Ni and H atoms in Si are in the range of 925–985 cm –1 . The DLTS spectra in n - and p -type silicon doped with N...

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Veröffentlicht in:	Russian physics journal 2023, Vol.65 (9), p.1559-1563
Hauptverfasser:	Nasriddinov, S. S., Esbergenov, D. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic properties Chemical etching Condensed Matter Physics Deep level transient spectroscopy Defects Hadrons Heavy Ions Hydrogen Hydrogen bonding Lasers Mathematical and Computational Physics Nickel Nuclear Physics Optical Devices Optics Photonics Physics Physics and Astronomy Raman spectroscopy Silicon Theoretical
Online-Zugang:	Volltext
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