A Study of Complex Defect Formation in Silicon Doped With Nickel

The behavior of nickel and hydrogen impurities in silicon is studied by the methods of deep-level transient spectroscopy (DLTS) and Raman spectroscopy. It is shown that the vibrations of Ni and H atoms in Si are in the range of 925–985 cm –1 . The DLTS spectra in n - and p -type silicon doped with Ni atoms exhibit two deep levels with the energies of E v + 0.17 eV and E c – 0.42 eV. It is found out that during chemical etching various hydrogen-bonded defect complexes are formed in Si doped with Ni, the energies of which are E c – 0.18 eV, E c – 0.54 eV, E v + 0.26 eV, and E v + 0.55 eV.