Comparison of the Properties of Defect States in Nitrogen‐Containing n‐ and p‐Type Float‐Zone Silicon: A Combined Deep‐Level Transient Spectroscopy and Minority‐Carrier Transient Spectroscopy Study

Defect states in nitrogen‐containing float‐zone silicon are investigated in both n‐ and p‐type materials using both deep‐level transient spectroscopy (DLTS) and minority‐carrier transient spectroscopy (MCTS). This enables a mapping of the defect landscape in the entire electronic bandgap and an investigation of whether the properties of the defects depend on the semiconductor type. Two defects, the E1/E2 pair and the E4/E6 pair, are investigated, and no evidence is found for the defect properties to depend on the semiconductor type. The defect landscape of nitrogen‐containing float‐zone silicon is investigated using both deep‐level transient spectroscopy (DLTS) and minority‐carrier transient spectroscopy (MCTS). This enables a thorough comparison of the defect behavior in lowly doped n‐ and p‐type materials. The results of this comparison demonstrate that the properties of the studied defects do not depend on the semiconductor type.