Effect of thickness (ZnO:B) prepare by LPCVD on the electrical and optical properties for Si solar cell application

We are studying in this research, the optimization of thickness of ZnO:B thin films with respect to its usage as a contact layer for silicon solar cells with large area obtained by (LPCVD) to increase the efficiency of Si solar cell. The electrical and optical properties of ZnO:B thin film electrodes with a differences thickness (0.2,0.5,1,1.6 µm) prepared by LPCVD method are studied, where, the transmittance is significantly reduced as the film thickness increases, diffuse transmittance and HAZE factor was decreased, where the best value in 1.6 µm approach 18.2% and sheet resistance about 18Ω. The optical band gap (Eg) was gradually lowered to 3.2 eV to further increase the film thickness to 1.6 µm. The best J-V characteristics was achieved for ZnO:B electrode when thin films thickness (1.6 µm) thus, recording higher efficiency approach (7.58%) and fill factor (0. 5).