Controlling the Morphological, Optical and Dielectric Characteristics of PS/SiC/CeO2 Nanostructures for Nanoelectronics and Optics Fields

The present work aims to synthesize of polystyrene (PS)-cerium oxide (CeO 2 )- silicon carbide (SiC) nanostructures as promising materials to utilize in various optics nanoelectronics devices like transistors, photovoltaic cell, electronic gates and other applications. The structural, optical and electrical characteristics of PS/CeO 2 /SiC nanostructures have been investigated. The results indicated that the absorbance (A) was increased about 46.1% at UV-spectra (λ = 300 nm) and 59.1% at visible- spectra (λ = 500 nm). The energy gap of PS was decreased from 4 eV to 2.8 eV when the ratio of CeO 2 /SiC nanostructures reached (4.8 wt.%) which made it suitable for several optics and nanoelectronics fields. The optical parameters of PS matrix were enhanced with an increase in the CeO 2 /SiC NPs content. Results of the AC electrical properties showed that the dielectric constant (ε') and AC electrical conductivity (σ AC ) were improved about 35% and 66.1% with rise in the CeO 2 /SiC nanostructures content at (f = 1 kHz). Finally, the obtained results showed the PS/CeO 2 /SiC nanostructures are promising for various optics and nanoelectronics fields.