Vortex Domain Wall Thermal Stability in Magnetic Nanodevices with In‐Plane Magnetic Anisotropy

Thermal switching of vortex domain walls (VW) in planar magnetic nanowires is a key challenge for storing data. Understanding the VW magnetization thermal switching, thermal transformation, and dynamics in magnetic nanowires is essential for the development of magnetic data storage. Thus, a micromagnetic simulation is used to investigate the effect of device temperature (T) on VW thermal switching, structural transformation, and VW dynamics in magnetic nanowires. The VW thermal nucleation is examined based on magnetic properties and magnetization in nanowires becomes more stable. Furthermore, in this study, it is found that VW thermal structural stability decreases by increasing the device temperature. The speed of VW is observed to rise exponentially by increasing the device temperature up to 600 m s−1. Thus, the VW memory is fast in writing and reading stored data at room temperature and higher. The findings reveal the potentiality of a VW simple nanomagnetic as a building block for spintronic devices such as a memory cell where the bit data are stored and VW are stable with high thermal switching stability. Herein, a micromagnetic simulation is used to investigate the effect of device temperature (T) on VW thermal switching, structural transformation, and vortex domain wall (VW) dynamics in magnetic nanowires. The VW thermal nucleation is examined based on magnetic properties and device dimensions.