Circularly polarised photoluminescence and electroluminescence of chiral copper( i ) dimers based on R / S -2,2′-bis(diphenylphosphino)-1,1′-binaphthalene ligands
Due to the ability to emit circularly polarised luminescence (CPL) for application in many areas, chiral luminescent materials have undergone rapid development in recent years. Herein, three chiral copper( i ) chloro-bridged dimers R / S -(BINAP) 2 Cu(μ-X 2 ) (X = Cl, Br and I) based on R / S -2,2′-...
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Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2023-01, Vol.11 (4), p.1329-1335 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Due to the ability to emit circularly polarised luminescence (CPL) for application in many areas, chiral luminescent materials have undergone rapid development in recent years. Herein, three chiral copper(
i
) chloro-bridged dimers
R
/
S
-(BINAP)
2
Cu(μ-X
2
) (X = Cl, Br and I) based on
R
/
S
-2,2′-bis(diphenylphosphino)-1,1′-binaphthalene (
R
/
S
-BINAP) ligands were synthesized conveniently at room temperature with high yields above 95%. Though emissions of the compounds in solution are weak, the dimers in the powder form and doped films displayed strong luminescence. Furthermore, the small singlet–triplet energy level gap and the calculated theoretical frontier molecular orbital distribution overlap suggested that these dimers have thermally activated delayed fluorescence characteristics. In addition,
R
/
S
-(BINAP)
2
Cu(μ-X
2
) doped films showed mirror symmetric circular dichroism and CPL spectra with a high dissymmetry factor (
g
) above 1 × 10
−2
. However, the corresponding circularly polarised organic light-emitting diodes (CP-OLEDs) fabricated by the evaporation method based on
R
/
S
-(BINAP)
2
Cu(μ-I
2
) exhibited a high maximum external quantum efficiency of 21.7%. Notably, the CP-OLEDs also displayed mirror imaged circularly polarised electroluminescence spectra with |
g
EL
| factors of around 3.0 × 10
−3
. |
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ISSN: | 2050-7526 2050-7534 |
DOI: | 10.1039/D2TC04895G |