Organic Memristor Based on High Planar Cyanostilbene/Polymer Composite Films

O rganic memristors with low power consumption, fast write/erasure speed, and complementary metal-oxide-semiconductor(CMOS) compatibility have attracted tremendous attention to mimic biological synapses to realize neuromorphic computation in recent years. In this paper, organic resistive switching memory(ORSM) based on ( Z )-3-(naphthalen-2-yl)-2-(4-nitrophenyl)acrylonitrile(NNA) and polymer poly( N -vinylcarbazole)(PVK) composite film was prepared by spin-coating method. Device performance based on NNA:PVK composite films with different mass fractions of NNA were systematically investigated. The ORSM based on PVK:40%(mass fraction) NNA composite film exhibited non-volatile and bipolar memory properties with a switching ratio( I on / I off ) of 24.1, endurance of 68 times and retention time of 10 4 s, a “SET” voltage( V set ) of −0.55 V and a “RESET” voltage( V reset ) of 2.35 V. The resistive switching was ascribed to the filling and vacant process of the charge traps induced by NNA and the inherent traps in PVK bulk. The holes trapping and de-trapping process occurred when the device was applied with a negative or positive bias, which caused the transforming of the conductive way of charges, that is the resistive behaviors in the macroscopic. This study provides a promising platform for the fabrication of ORSM with high performance.