Investigation of inhomogeneous device parameters by current–voltage characteristics of identically prepared lateral Schottky diodes with tin oxide interface layer
We have identically produced 70 dots of Au/SnO 2 /n-Si Schottky diodes using spray deposition method and investigated the mean values of diode parameters using current–voltage ( I–V ) measurements at room temperature. The ideality factor ( n ) and barrier height ( Φ B ) calculated using thermionic e...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2023, Vol.34 (3), p.160, Article 160 |
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| container_title | Journal of materials science. Materials in electronics |
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| creator | Tuğluoğlu, Nihat Eymur, Serkan Turan, Neslihan |
| description | We have identically produced 70 dots of Au/SnO
2
/n-Si Schottky diodes using spray deposition method and investigated the mean values of diode parameters using current–voltage (
I–V
) measurements at room temperature. The ideality factor (
n
) and barrier height (
Φ
B
) calculated using thermionic emission model were determined to be temperature dependent. The
Φ
B
and
n
for 70 dots of the varied from diode to diode have ranged from 0.672 to 0.729 eV and 2.60 to 2.97, respectively. Mean ideality factor and barrier height values were found as 2.76 and 0.700 eV, respectively. We have estimated a lateral homogeneous barrier height value of 0.746 eV for 70 dots of the Au/SnO
2
/n-Si diodes from the linear relationship between the experimental ideality factors and barrier heights. The correlation between
Φ
B
and
n
of the identically fabricated the diodes was clarified by lateral inhomogeneities of
Φ
B
. |
| doi_str_mv | 10.1007/s10854-022-09659-8 |
| format | Article |
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2
/n-Si Schottky diodes using spray deposition method and investigated the mean values of diode parameters using current–voltage (
I–V
) measurements at room temperature. The ideality factor (
n
) and barrier height (
Φ
B
) calculated using thermionic emission model were determined to be temperature dependent. The
Φ
B
and
n
for 70 dots of the varied from diode to diode have ranged from 0.672 to 0.729 eV and 2.60 to 2.97, respectively. Mean ideality factor and barrier height values were found as 2.76 and 0.700 eV, respectively. We have estimated a lateral homogeneous barrier height value of 0.746 eV for 70 dots of the Au/SnO
2
/n-Si diodes from the linear relationship between the experimental ideality factors and barrier heights. The correlation between
Φ
B
and
n
of the identically fabricated the diodes was clarified by lateral inhomogeneities of
Φ
B
.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-022-09659-8</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Current voltage characteristics ; Diodes ; Materials Science ; Metal oxides ; Morphology ; Optical and Electronic Materials ; Parameters ; Room temperature ; Scanning electron microscopy ; Schottky diodes ; Spray deposition ; Temperature dependence ; Thermionic emission ; Tin dioxide ; Tin oxides</subject><ispartof>Journal of materials science. Materials in electronics, 2023, Vol.34 (3), p.160, Article 160</ispartof><rights>The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c249t-1a419fbd7cd0becd8e4cb2cb5595adf377db3ea33b21b5cd7589ed51524e42be3</citedby><cites>FETCH-LOGICAL-c249t-1a419fbd7cd0becd8e4cb2cb5595adf377db3ea33b21b5cd7589ed51524e42be3</cites><orcidid>0000-0001-9428-4347</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-022-09659-8$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-022-09659-8$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Tuğluoğlu, Nihat</creatorcontrib><creatorcontrib>Eymur, Serkan</creatorcontrib><creatorcontrib>Turan, Neslihan</creatorcontrib><title>Investigation of inhomogeneous device parameters by current–voltage characteristics of identically prepared lateral Schottky diodes with tin oxide interface layer</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>We have identically produced 70 dots of Au/SnO
2
/n-Si Schottky diodes using spray deposition method and investigated the mean values of diode parameters using current–voltage (
I–V
) measurements at room temperature. The ideality factor (
n
) and barrier height (
Φ
B
) calculated using thermionic emission model were determined to be temperature dependent. The
Φ
B
and
n
for 70 dots of the varied from diode to diode have ranged from 0.672 to 0.729 eV and 2.60 to 2.97, respectively. Mean ideality factor and barrier height values were found as 2.76 and 0.700 eV, respectively. We have estimated a lateral homogeneous barrier height value of 0.746 eV for 70 dots of the Au/SnO
2
/n-Si diodes from the linear relationship between the experimental ideality factors and barrier heights. The correlation between
Φ
B
and
n
of the identically fabricated the diodes was clarified by lateral inhomogeneities of
Φ
B
.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Current voltage characteristics</subject><subject>Diodes</subject><subject>Materials Science</subject><subject>Metal oxides</subject><subject>Morphology</subject><subject>Optical and Electronic Materials</subject><subject>Parameters</subject><subject>Room temperature</subject><subject>Scanning electron microscopy</subject><subject>Schottky diodes</subject><subject>Spray deposition</subject><subject>Temperature dependence</subject><subject>Thermionic emission</subject><subject>Tin dioxide</subject><subject>Tin oxides</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9kTuOFDEQhi0EEsPCBYgsETf42e4O0YrHSisRLEhklh_VM1562oPtGbYz7sAVOBknodhBIiNy4O__qlQ_Ic85e8kZM68qZ4NWHROiY2Ovx254QDZcG9mpQXx-SDZs1KZTWojH5Emtt4yxXslhQ35eLSeoLW1dS3mheaJp2eV93sIC-VhphFMKQA-uuD00KJX6lYZjKbC0X99_nPLc3BZo2CEQ8D-hK9R7T0QkBTfPKz0UQANEOjtk3Exvwi639mWlMeUIlX5LbUdbwgXuMIc7IDY5HDy7FcpT8mhyc4Vnf98L8untm4-X77vrD--uLl9fd0GosXXcKT5OPpoQmYcQB1DBi-C1HrWLkzQmeglOSi-41yEaPYwQNddCgRIe5AV5cfYeSv56xLPY23wsC460wvRG6l4PPVLiTIWSay0w2UNJe1dWy5n904Y9t2GxDXvfhh0wJM-hivCyhfJP_Z_UbyhTlOg</recordid><startdate>2023</startdate><enddate>2023</enddate><creator>Tuğluoğlu, Nihat</creator><creator>Eymur, Serkan</creator><creator>Turan, Neslihan</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><orcidid>https://orcid.org/0000-0001-9428-4347</orcidid></search><sort><creationdate>2023</creationdate><title>Investigation of inhomogeneous device parameters by current–voltage characteristics of identically prepared lateral Schottky diodes with tin oxide interface layer</title><author>Tuğluoğlu, Nihat ; Eymur, Serkan ; Turan, Neslihan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c249t-1a419fbd7cd0becd8e4cb2cb5595adf377db3ea33b21b5cd7589ed51524e42be3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Current voltage characteristics</topic><topic>Diodes</topic><topic>Materials Science</topic><topic>Metal oxides</topic><topic>Morphology</topic><topic>Optical and Electronic Materials</topic><topic>Parameters</topic><topic>Room temperature</topic><topic>Scanning electron microscopy</topic><topic>Schottky diodes</topic><topic>Spray deposition</topic><topic>Temperature dependence</topic><topic>Thermionic emission</topic><topic>Tin dioxide</topic><topic>Tin oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tuğluoğlu, Nihat</creatorcontrib><creatorcontrib>Eymur, Serkan</creatorcontrib><creatorcontrib>Turan, Neslihan</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tuğluoğlu, Nihat</au><au>Eymur, Serkan</au><au>Turan, Neslihan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of inhomogeneous device parameters by current–voltage characteristics of identically prepared lateral Schottky diodes with tin oxide interface layer</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2023</date><risdate>2023</risdate><volume>34</volume><issue>3</issue><spage>160</spage><pages>160-</pages><artnum>160</artnum><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>We have identically produced 70 dots of Au/SnO
2
/n-Si Schottky diodes using spray deposition method and investigated the mean values of diode parameters using current–voltage (
I–V
) measurements at room temperature. The ideality factor (
n
) and barrier height (
Φ
B
) calculated using thermionic emission model were determined to be temperature dependent. The
Φ
B
and
n
for 70 dots of the varied from diode to diode have ranged from 0.672 to 0.729 eV and 2.60 to 2.97, respectively. Mean ideality factor and barrier height values were found as 2.76 and 0.700 eV, respectively. We have estimated a lateral homogeneous barrier height value of 0.746 eV for 70 dots of the Au/SnO
2
/n-Si diodes from the linear relationship between the experimental ideality factors and barrier heights. The correlation between
Φ
B
and
n
of the identically fabricated the diodes was clarified by lateral inhomogeneities of
Φ
B
.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-022-09659-8</doi><orcidid>https://orcid.org/0000-0001-9428-4347</orcidid></addata></record> |
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| ispartof | Journal of materials science. Materials in electronics, 2023, Vol.34 (3), p.160, Article 160 |
| issn | 0957-4522 1573-482X |
| language | eng |
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| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Current voltage characteristics Diodes Materials Science Metal oxides Morphology Optical and Electronic Materials Parameters Room temperature Scanning electron microscopy Schottky diodes Spray deposition Temperature dependence Thermionic emission Tin dioxide Tin oxides |
| title | Investigation of inhomogeneous device parameters by current–voltage characteristics of identically prepared lateral Schottky diodes with tin oxide interface layer |
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