Investigation of inhomogeneous device parameters by current–voltage characteristics of identically prepared lateral Schottky diodes with tin oxide interface layer

We have identically produced 70 dots of Au/SnO 2 /n-Si Schottky diodes using spray deposition method and investigated the mean values of diode parameters using current–voltage ( I–V ) measurements at room temperature. The ideality factor ( n ) and barrier height ( Φ B ) calculated using thermionic emission model were determined to be temperature dependent. The Φ B and n for 70 dots of the varied from diode to diode have ranged from 0.672 to 0.729 eV and 2.60 to 2.97, respectively. Mean ideality factor and barrier height values were found as 2.76 and 0.700 eV, respectively. We have estimated a lateral homogeneous barrier height value of 0.746 eV for 70 dots of the Au/SnO 2 /n-Si diodes from the linear relationship between the experimental ideality factors and barrier heights. The correlation between Φ B and n of the identically fabricated the diodes was clarified by lateral inhomogeneities of Φ B .