Investigation of the Robustness of Nanoelectronic Structures Based on Resonant Tunneling Elements

Multi-input logic elements based on MOnostable-to-BIstable transition Logic Element (MOBILE) two-level logic cells are characterized by a low (picosecond) switching time and higher functionality due to the ability to implement logic functions with fewer elements. This creates good prospects for the development of ultrafast FPGAs with a high degree of integration, which are necessary for organizing high-performance computing. However, the extremely high sensitivity of resonant tunneling elements to changes in the energies of quantum states requires an assessment of the stability of such structures to external influences under real operating conditions. The paper considers the problem of assessing the stability of nanoelectronic structures, which include resonant tunneling elements. A technique for studying the robustness of MOBILE logic cells based on a resonant tunneling diode and an HBT transistor is proposed, which makes it possible to find an external interval estimate of the output voltage of the device under study for the given interval models of the initial components. The technique is based on the use of systems of topological and parametric equations written in finite increments. It is shown that the proposed principle of decomposition of the original interval model provides the algorithmic solvability of the problem. A computational algorithm for calculating processes in a two-level logical MOBILE cell is developed. The algorithm provides for step-by-step integration of interval differential equations and the solution of interval nonlinear algebraic equations at each integration step using the Kaucher interval arithmetic. The obtained results of studying the processes in a two-level logic cell MOBILE create prerequisites for expanding the scope of resonant tunneling devices in high-speed monolithic ICs.