Potential of the Amorphous Oxide Semiconductors for Heterogeneous Power Integration Applications

In the emerging heterogeneous power integration applications, the power devices have to be fabricated on metal/glass/organics. In this field, amorphous oxide semiconductors (AOSs) have being the dominant semiconductor material to fulfill the low-temperature fabrication requirement. In the AOSs, the theoretical tradeoff between specific \biosc{on} -resistance ( \textit{R}_{\biosc{on},\text{sp}} ) and breakdown voltage (BV) is discussed. It is found that the tradeoff is rather different from the situation in these commonly used single-crystal semiconductors. In the AOSs, under the one-dimensional condition, \textit{R}_{\biosc{on},\text{sp}} is not proportional to {\textbf{BV}^\textbf{2}} due to the unique charge carrier mobility dependence on the carrier concentration. An analytical model has been extracted to describe such dependence, and it is found that \textit{R}_{\biosc{on},\text{sp}} is proportional to \text{BV}^{\text{4}} . Moreover, it is revealed that under a two-dimensional condition, such as reduced surface field (RESURF) condition, a "heavily doped" drift region can be used, and the mobility degradation issue could be resolved.