Integrated 4H-SiC Photosensors With Active Pixel Sensor-Type Circuits for MGy-Class Radiation Hardened CMOS UV Image Sensor

Integrated 4H-SiC Photosensors With Active Pixel Sensor-Type Circuits for MGy-Class Radiation Hardened CMOS UV Image Sensor

For radiation-hardened CMOS image sensor (CIS), 4H-SiC photosensors with active pixel sensor (APS)-type circuits were developed and demonstrated. The dark current of 4H-SiC photodiodes was

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Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 2023-01, Vol.44 (1), p.100-103
Hauptverfasser: Tsutsumi, Masayuki, Meguro, Tatsuya, Takeyama, Akinori, Ohshima, Takeshi, Tanaka, Yasunori, Kuroki, Shin-Ichiro
Format: Artikel
Sprache:eng
Schlagworte:
4H-SiC
active pixel sensor
Active pixel sensors
Circuits
CMOS
Dark current
image sensors
Logic gates
MOSFET
MOSFETs
photodiode
Photodiodes
Pixels
Radiation effects
radiation hardened
Radiation hardening
Radiation hardening (electronics)
Silicon
Silicon carbide
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Beschreibung
Zusammenfassung:For radiation-hardened CMOS image sensor (CIS), 4H-SiC photosensors with active pixel sensor (APS)-type circuits were developed and demonstrated. The dark current of 4H-SiC photodiodes was
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2022.3226494