Sonohydrothermal-assisted ZnS nanocrystals for improved structural, electronic, and optical properties: Experimental and ab initio methods
[Display omitted] •Cubic phase ZnS nanoparticles (NPs) were achieved via a facile sonohydrothermal method.•They show superior structural, morphological, electrical, and optical properties.•Absorption coefficient, effective mass, and electron/hole mobilities are evaluated.•Electronic structure, densi...
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Veröffentlicht in: | Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2022-12, Vol.286, p.115983, Article 115983 |
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Sprache: | eng |
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•Cubic phase ZnS nanoparticles (NPs) were achieved via a facile sonohydrothermal method.•They show superior structural, morphological, electrical, and optical properties.•Absorption coefficient, effective mass, and electron/hole mobilities are evaluated.•Electronic structure, density of states, and dielectric function are analyzed via first-principles calculations.
Herein, ZnS nanoparticles (NPs) with controlled size, crystal structure and effective optoelectronic properties were investigated via facile sonohydrothermal synthesis (SH) at 190 °C for up to 12 h. The average crystallite size of ZnS NPs using SH and hydrothermal (HT) were analysed through Debye–Scherrer equation from the X-ray diffraction (XRD). From current density–voltage (J–V) characteristics, the growth of nanoparticles by SH synthesis exhibits non-linear behaviour and higher current density than the HT method. The optical bandgap of as-synthesized ZnS nanoparticles of HT and SH synthesis were 3.60 and 3.61 eV, respectively. From the first-principles calculations using Tran–Blaha-modified Becke–Johnson potential, the bandgap is consistent with the experimental findings compared with the Perdew–Burke–Ernzerhof approximation. The obtained structural, electronic and optical properties revealed that SH synthesis is a potential alternative that may yield a possible route for developing new material applications in optoelectronics. |
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ISSN: | 0921-5107 1873-4944 |
DOI: | 10.1016/j.mseb.2022.115983 |