Influence of sintering temperature on electrical properties of Fe substituted NdCrO3 relaxor perovskite ceramic materials

•Effect of 450 °C, 900 °C sintering temperature on dielectric properties of NdCr1-xFexO3 (0 ≤x≤1) perovskite ceramics were successfully studied 115 K-315 K at 1 kHz, 10 kHz, 100 kHz and 1 MHz.•Real part of modulus (M′) of all samples show broad peak in each curve and shifted towards the higher temperature with rise in frequency indicating relaxor semiconductor nature.•The temperature dependent real part of dielectric constant (ε′) curves of all samples possess step like relaxation.•ac conductivity (σac) are estimated at 10 kHz, 315 K and are 4.5x 10-5 S/m, 1x 10-3 S/m, 1.4x 10-7 S/m; 1.8x 10-3 S/m, 1.2x 10-2 S/m, 1x 10-6 S/m for x = 0, 0.5, 1 samples of 450 °C and 900 °C sintered samples respectively.•Significant results of samples are useful in high power density capacitor and microwave applications. Temperature-dependent dielectric properties of NdCr1-xFexO3 (0 ≤x≤1) (NCFO) perovskite nanocrystalline materials were successfully studied at 1 kHz, 10 kHz, 100 kHz, and 1 MHz selected frequencies. Temperature dependent real part of dielectric constant (ε′) curves of all samples exhibit step like relaxations. Capacitance (C) have been calculated for x = 0, 0.5, 1 samples of both 450 °C, 900 °C sintered systems at 1 kHz & 315 K and are found to be 4.5x 10-11 F, 1.5x 10-10 F, 3.7x 10-12 F; 1.4x 10-9 F, 2.6x 10-10, 9.3x 10-12 F respectively. Temperature variation real part of impedance (Z′), dielectric loss (tan δ) and imaginary part of modules (M″) plots have shown relaxor behavior. These plots obeyed Arrhenius law, and activation energies (Ea) are found to be in the order of 0.7–0.94 eV indicating semiconductor behavior. It is also noticed that ac conductivity (σac) is progressively increased with augment in temperature. σac have been estimated for x = 0, 0.5, 1 samples of both 450 °C and 900 °C sintered systems at 10 kHz & 315 K which are 4.5x 10-5 S/m, 1x 10-3 S/m, 1.4x 10-7 S/m; 1.8x 10-3 S/m, 1.2x 10-2 S/m, 1x 10-6 S/m respectively. High sintered (900 °C) samples possess high grain growth, and densification, which leads to significant structural and structural and electrical properties. Significant results of samples are suitable for high-power-density capacitors and microwave applications.