Evaluation on Negative Voltage Analysis Model for Gate Driving of MOSFET Application
In power converter or inverter applications, MOSFETs are used as switches to control the value of output current or voltage. The MOSFET turn on/off are controlled by the PWM control IC or MCU with gate driver to achieve high frequency switching. In general, the absolute maximum negative voltage rati...
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| Veröffentlicht in: | Sensors & transducers 2022-10, Vol.259 (5), p.75-81 |
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| creator | Chen, Ching-Guo Lee, Shiu-Hui Yu, Chih-Ming Huang, Wen-Nan Lee, Jin-Shyan Meng, Hsing-Chi Lai, Tung-Ming |
| description | In power converter or inverter applications, MOSFETs are used as switches to control the value of output current or voltage. The MOSFET turn on/off are controlled by the PWM control IC or MCU with gate driver to achieve high frequency switching. In general, the absolute maximum negative voltage rating of the driving pin at the control IC or gate driver is not sufficient and the driving pin could be damaged by negative voltage which could be induced by the high frequency switching during the MOSFET turn on/off. The main purpose of this paper is to derive and adopt the negative voltage analysis model to evaluate and find out the MOSFET parameter relation which leads to the control IC damaged by negative voltage. The experimental results are demonstrated on the LLC converter with 400 V input voltage and 12 V output voltage. The negative voltage waveforms are measured from the LLC half bridge and synchronous rectifier circuits. Several experimental results are presented to validate this analysis model. |
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The MOSFET turn on/off are controlled by the PWM control IC or MCU with gate driver to achieve high frequency switching. In general, the absolute maximum negative voltage rating of the driving pin at the control IC or gate driver is not sufficient and the driving pin could be damaged by negative voltage which could be induced by the high frequency switching during the MOSFET turn on/off. The main purpose of this paper is to derive and adopt the negative voltage analysis model to evaluate and find out the MOSFET parameter relation which leads to the control IC damaged by negative voltage. The experimental results are demonstrated on the LLC converter with 400 V input voltage and 12 V output voltage. The negative voltage waveforms are measured from the LLC half bridge and synchronous rectifier circuits. Several experimental results are presented to validate this analysis model.</description><identifier>ISSN: 2306-8515</identifier><identifier>EISSN: 1726-5479</identifier><language>eng</language><publisher>Toronto: IFSA Publishing, S.L</publisher><subject>Electric bridges ; Electric potential ; Energy ; Evaluation ; High frequencies ; MOSFETs ; Power converters ; Power supply ; Switches ; Switching ; Voltage ; Waveforms</subject><ispartof>Sensors & transducers, 2022-10, Vol.259 (5), p.75-81</ispartof><rights>2022. This work is published under https://creativecommons.org/licenses/by/4.0/ (the “License”). 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The MOSFET turn on/off are controlled by the PWM control IC or MCU with gate driver to achieve high frequency switching. In general, the absolute maximum negative voltage rating of the driving pin at the control IC or gate driver is not sufficient and the driving pin could be damaged by negative voltage which could be induced by the high frequency switching during the MOSFET turn on/off. The main purpose of this paper is to derive and adopt the negative voltage analysis model to evaluate and find out the MOSFET parameter relation which leads to the control IC damaged by negative voltage. The experimental results are demonstrated on the LLC converter with 400 V input voltage and 12 V output voltage. The negative voltage waveforms are measured from the LLC half bridge and synchronous rectifier circuits. 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| source | Free E-Journal (出版社公開部分のみ）; Alma/SFX Local Collection |
| subjects | Electric bridges Electric potential Energy Evaluation High frequencies MOSFETs Power converters Power supply Switches Switching Voltage Waveforms |
| title | Evaluation on Negative Voltage Analysis Model for Gate Driving of MOSFET Application |
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