Fascinating Electrical Transport Behavior of Topological Insulator Bi2Te3 Nanorods: Toward Electrically Responsive Smart Materials

Electrical conductivity and dielectric parameters are general inherent features of materials. Controlling these characteristics through applied bias will add a new dimension to regulate the dynamic response of smart materials. Here, a fascinating electrical transport behavior is observed in topological insulator (TI) Bi2Te3 nanorods, which will play a vital role in intelligent materials or devices as a unit for information reception, processing or feedback. The Bi2Te3 nanorod aggregates exhibit a monotonic resistance response to voltage, with observed four‐fold change of electrical conductivity in a small range electric field of 1 V mm−1. The dielectric constant and dielectric loss of Bi2Te3 nanorod composites also show strong dependences on bias voltage due to the unique electrical transport characteristics. The unique voltage‐controlled electrical responses are attributed to the change of Fermi levels within the band structure of disordered TI nanorods, which are non‐parallel to the applied electric field. The excellent controllable inherent characteristics through electric field endows Bi2Te3 nanomaterials bright prospects for applications in smart devices and resistive random access memories. Bi2Te3 nanorods exhibit monotonic resistance response to voltage and strong dependence of dielectric constant on voltage. Compared with other materials, the Bi2Te3 nanorod aggregates have the largest electrical conductivity variation range with smallest voltage scope. The fascinating electrical transport behavior endows the material with tremendous application potential in communication systems, smart devices, miniature generators, and intelligent storage.