Improved resistive switching characteristics in the p+-Si/ZnO:Al/Ni heterojunction device
Both bipolar and unipolar resistive switching (RS) characteristics have been demonstrated based on p + -Si/ZnO:Al/Ni heterojunction device. Here, the Al nanoparticles are introduced at the p + -Si/n-ZnO interface by sputtering deposition and thermal annealing. The p + -Si/ZnO:Al/Ni device, especiall...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2023, Vol.129 (1), Article 50 |
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| container_title | Applied physics. A, Materials science & processing |
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| creator | Li, Xinmiao Yu, Hao Fang, Ruihua Zhu, Wenhui Wang, Liancheng Zhang, Lei |
| description | Both bipolar and unipolar resistive switching (RS) characteristics have been demonstrated based on p
+
-Si/ZnO:Al/Ni heterojunction device. Here, the Al nanoparticles are introduced at the p
+
-Si/n-ZnO interface by sputtering deposition and thermal annealing. The p
+
-Si/ZnO:Al/Ni device, especially for the negative RS process, shows smaller resistive voltages and more concentrated resistance distributions than the device without Al nanoparticles. For the device with Al nanoparticles, the Al nanoparticles can eliminate the potential barrier of p
+
-Si/n-ZnO interface and act as tip electrodes for RS, while the location without Al nanoparticles at the interface is not easy to form the conducting filaments (CFs) due to the existence of interface potential barrier. The electric field can be enhanced and concentrated and lead to a simplified-CFs structure along the Al nanoparticles. Thus, p
+
-Si/ZnO:Al/Ni heterojunction device can effectively improve the RS uniformity. |
| doi_str_mv | 10.1007/s00339-022-06307-0 |
| format | Article |
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+
-Si/ZnO:Al/Ni heterojunction device. Here, the Al nanoparticles are introduced at the p
+
-Si/n-ZnO interface by sputtering deposition and thermal annealing. The p
+
-Si/ZnO:Al/Ni device, especially for the negative RS process, shows smaller resistive voltages and more concentrated resistance distributions than the device without Al nanoparticles. For the device with Al nanoparticles, the Al nanoparticles can eliminate the potential barrier of p
+
-Si/n-ZnO interface and act as tip electrodes for RS, while the location without Al nanoparticles at the interface is not easy to form the conducting filaments (CFs) due to the existence of interface potential barrier. The electric field can be enhanced and concentrated and lead to a simplified-CFs structure along the Al nanoparticles. Thus, p
+
-Si/ZnO:Al/Ni heterojunction device can effectively improve the RS uniformity.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-022-06307-0</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Aluminum ; Applied physics ; Characterization and Evaluation of Materials ; Condensed Matter Physics ; Electric fields ; Filaments ; Heterojunction devices ; Machines ; Manufacturing ; Materials science ; Nanoparticles ; Nanotechnology ; Nickel ; Optical and Electronic Materials ; Physics ; Physics and Astronomy ; Potential barriers ; Processes ; Silicon ; Surfaces and Interfaces ; Switching ; Thin Films ; Zinc oxide</subject><ispartof>Applied physics. A, Materials science & processing, 2023, Vol.129 (1), Article 50</ispartof><rights>The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature 2022. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-ebdb6a5fdd59446217d0ab5e75f007e7fe882c732352b88c23ead4ccf13a4a713</citedby><cites>FETCH-LOGICAL-c319t-ebdb6a5fdd59446217d0ab5e75f007e7fe882c732352b88c23ead4ccf13a4a713</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-022-06307-0$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-022-06307-0$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Li, Xinmiao</creatorcontrib><creatorcontrib>Yu, Hao</creatorcontrib><creatorcontrib>Fang, Ruihua</creatorcontrib><creatorcontrib>Zhu, Wenhui</creatorcontrib><creatorcontrib>Wang, Liancheng</creatorcontrib><creatorcontrib>Zhang, Lei</creatorcontrib><title>Improved resistive switching characteristics in the p+-Si/ZnO:Al/Ni heterojunction device</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>Both bipolar and unipolar resistive switching (RS) characteristics have been demonstrated based on p
+
-Si/ZnO:Al/Ni heterojunction device. Here, the Al nanoparticles are introduced at the p
+
-Si/n-ZnO interface by sputtering deposition and thermal annealing. The p
+
-Si/ZnO:Al/Ni device, especially for the negative RS process, shows smaller resistive voltages and more concentrated resistance distributions than the device without Al nanoparticles. For the device with Al nanoparticles, the Al nanoparticles can eliminate the potential barrier of p
+
-Si/n-ZnO interface and act as tip electrodes for RS, while the location without Al nanoparticles at the interface is not easy to form the conducting filaments (CFs) due to the existence of interface potential barrier. The electric field can be enhanced and concentrated and lead to a simplified-CFs structure along the Al nanoparticles. Thus, p
+
-Si/ZnO:Al/Ni heterojunction device can effectively improve the RS uniformity.</description><subject>Aluminum</subject><subject>Applied physics</subject><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Electric fields</subject><subject>Filaments</subject><subject>Heterojunction devices</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Materials science</subject><subject>Nanoparticles</subject><subject>Nanotechnology</subject><subject>Nickel</subject><subject>Optical and Electronic Materials</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Potential barriers</subject><subject>Processes</subject><subject>Silicon</subject><subject>Surfaces and Interfaces</subject><subject>Switching</subject><subject>Thin Films</subject><subject>Zinc oxide</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp9kE9PwzAMxSMEEmPwBThF4ojCnKRtWm7TxJ9JEzsAB7hEaepumbZ2JN0Q356MInHDF8vy79l6j5BLDjccQI0CgJQFAyEYZBIUgyMy4Insx2MygCJRLJdFdkrOQlhBrESIAXmbbra-3WNFPQYXOrdHGj5dZ5euWVC7NN7YDv1hYwN1De2WSLfX7NmN3pv57Xg9enJ0iRFpV7vGdq5taIV7Z_GcnNRmHfDitw_J6_3dy-SRzeYP08l4xqzkRcewrMrMpHVVpUWSZIKrCkyZokrraAxVjXkurJJCpqLMcyskmiqxtubSJEZxOSRX_d3o42OHodOrdueb-FILlWZZAaLIIiV6yvo2BI-13nq3Mf5Lc9CHCHUfoY4R6p8INUSR7EUhws0C_d_pf1TfOUt0pQ</recordid><startdate>2023</startdate><enddate>2023</enddate><creator>Li, Xinmiao</creator><creator>Yu, Hao</creator><creator>Fang, Ruihua</creator><creator>Zhu, Wenhui</creator><creator>Wang, Liancheng</creator><creator>Zhang, Lei</creator><general>Springer Berlin Heidelberg</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>2023</creationdate><title>Improved resistive switching characteristics in the p+-Si/ZnO:Al/Ni heterojunction device</title><author>Li, Xinmiao ; Yu, Hao ; Fang, Ruihua ; Zhu, Wenhui ; Wang, Liancheng ; Zhang, Lei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-ebdb6a5fdd59446217d0ab5e75f007e7fe882c732352b88c23ead4ccf13a4a713</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Aluminum</topic><topic>Applied physics</topic><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Electric fields</topic><topic>Filaments</topic><topic>Heterojunction devices</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Materials science</topic><topic>Nanoparticles</topic><topic>Nanotechnology</topic><topic>Nickel</topic><topic>Optical and Electronic Materials</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Potential barriers</topic><topic>Processes</topic><topic>Silicon</topic><topic>Surfaces and Interfaces</topic><topic>Switching</topic><topic>Thin Films</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Xinmiao</creatorcontrib><creatorcontrib>Yu, Hao</creatorcontrib><creatorcontrib>Fang, Ruihua</creatorcontrib><creatorcontrib>Zhu, Wenhui</creatorcontrib><creatorcontrib>Wang, Liancheng</creatorcontrib><creatorcontrib>Zhang, Lei</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Xinmiao</au><au>Yu, Hao</au><au>Fang, Ruihua</au><au>Zhu, Wenhui</au><au>Wang, Liancheng</au><au>Zhang, Lei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improved resistive switching characteristics in the p+-Si/ZnO:Al/Ni heterojunction device</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2023</date><risdate>2023</risdate><volume>129</volume><issue>1</issue><artnum>50</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>Both bipolar and unipolar resistive switching (RS) characteristics have been demonstrated based on p
+
-Si/ZnO:Al/Ni heterojunction device. Here, the Al nanoparticles are introduced at the p
+
-Si/n-ZnO interface by sputtering deposition and thermal annealing. The p
+
-Si/ZnO:Al/Ni device, especially for the negative RS process, shows smaller resistive voltages and more concentrated resistance distributions than the device without Al nanoparticles. For the device with Al nanoparticles, the Al nanoparticles can eliminate the potential barrier of p
+
-Si/n-ZnO interface and act as tip electrodes for RS, while the location without Al nanoparticles at the interface is not easy to form the conducting filaments (CFs) due to the existence of interface potential barrier. The electric field can be enhanced and concentrated and lead to a simplified-CFs structure along the Al nanoparticles. Thus, p
+
-Si/ZnO:Al/Ni heterojunction device can effectively improve the RS uniformity.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-022-06307-0</doi></addata></record> |
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| subjects | Aluminum Applied physics Characterization and Evaluation of Materials Condensed Matter Physics Electric fields Filaments Heterojunction devices Machines Manufacturing Materials science Nanoparticles Nanotechnology Nickel Optical and Electronic Materials Physics Physics and Astronomy Potential barriers Processes Silicon Surfaces and Interfaces Switching Thin Films Zinc oxide |
| title | Improved resistive switching characteristics in the p+-Si/ZnO:Al/Ni heterojunction device |
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