Improved resistive switching characteristics in the p+-Si/ZnO:Al/Ni heterojunction device

Both bipolar and unipolar resistive switching (RS) characteristics have been demonstrated based on p + -Si/ZnO:Al/Ni heterojunction device. Here, the Al nanoparticles are introduced at the p + -Si/n-ZnO interface by sputtering deposition and thermal annealing. The p + -Si/ZnO:Al/Ni device, especiall...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics. A, Materials science & processing Materials science & processing, 2023, Vol.129 (1), Article 50
Hauptverfasser: Li, Xinmiao, Yu, Hao, Fang, Ruihua, Zhu, Wenhui, Wang, Liancheng, Zhang, Lei
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Both bipolar and unipolar resistive switching (RS) characteristics have been demonstrated based on p + -Si/ZnO:Al/Ni heterojunction device. Here, the Al nanoparticles are introduced at the p + -Si/n-ZnO interface by sputtering deposition and thermal annealing. The p + -Si/ZnO:Al/Ni device, especially for the negative RS process, shows smaller resistive voltages and more concentrated resistance distributions than the device without Al nanoparticles. For the device with Al nanoparticles, the Al nanoparticles can eliminate the potential barrier of p + -Si/n-ZnO interface and act as tip electrodes for RS, while the location without Al nanoparticles at the interface is not easy to form the conducting filaments (CFs) due to the existence of interface potential barrier. The electric field can be enhanced and concentrated and lead to a simplified-CFs structure along the Al nanoparticles. Thus, p + -Si/ZnO:Al/Ni heterojunction device can effectively improve the RS uniformity.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-022-06307-0