Electrical characteristics of Al2O3/p-Si heterojunction diode and effects of radiation on the electrical properties of this diode

The temperature dependence of the electrical parameters of the Au/α-Al 2 O 3 / p -Si/Al heterojunction diode and the variation of these parameters with radiation were investigated. It has been determined that the lnI–V curves of the diode have non-linear plots and this is due to the inhomogeneity in the potential barrier. The ideality factor ( n ), barrier height ( Φ b ) and series resistance ( R s ) values of the diode were calculated depending on the temperature. It was determined that n and R s values decrease and Φ b values increase with the increase in temperature. The voltage coefficients and standard deviation values are calculated using the [(1/ n ) − 1] − 1/2 kT and Φ b − 1/2 kT graphs of heterojunction diode. The value of Richardson constant was calculated as A * = 7.64 A/K 2 cm 2 using conventional Richardson plot of ln(I 0 /T 2 ) against 1/ T . In addition, the effects of different X-ray irradiation doses on the I–V characteristics of Au/Al 2 O 3 / p -Si/Al heterojunction were examined.